Herbert Kroemer analysed theoretically the mobility of electrons and holes in heterostructure junctions. ❋ Unknown (2000)
Of utmost importance was, beyond doubts, the making of low threshold room temperature operating lasers on a double heterostructure (DHS) that had been suggested by us as far back as 1963. ❋ Unknown (2001)
At the time that we commenced our research on making the double heterostructure laser: ❋ Unknown (2001)
M.B. Panish and I. Hayashi (Bell Telephone) as well as by H. Kressel (RCA) was different from that of ours since they offered to use in lasers a single p-AlGaAs-p-GaAs heterostructure, which made their approach rather limited. ❋ Unknown (2001)
Apart from fundamental results that were quite new and important efficient one-side injection, the "superinjection" effect, diagonal tunneling, electron and optical confinement in a double heterostructure (which in a short while became the main element in studying the low-dimensional electron gas in semiconductors), we succeeded in employing principal benefits of heterostructure applications in devices, i.e., lasers, LEDs, solar cells, dynistors and transistors. ❋ Unknown (2001)
It was this problem that led directly to heterostructure ideas. ❋ Unknown (2001)
Without the heterostructure laser, today we would not have had optical broadband links, CD players, laser printers, bar code readers, laser pointers and numerous scientific instruments. ❋ Unknown (2000)
Such a heterostructure consists of two semiconductors whose atomic structures fit one another well, but which have different electronic properties. ❋ Unknown (2000)
Fig. 2: The laser diode of the CD player contains a semiconductor heterostructure. ❋ Unknown (2000)
Alferov was the first to succeed in producing a lattice-adapted heterostructure (AlGaAs/GaAs, 1969) with clear borders between the layers. ❋ Unknown (2000)
The first detailed description of a heterostructure transistor was published by Kroemer in 1957. ❋ Unknown (2000)
With heterostructure technology powerful light-emitting diodes are being built for use in car brake-lights, traffic lights and other warning lights. ❋ Unknown (2000)
Band offsets and chemical bonding: the basis for heterostructure applications, Herbert Kroemer, Physica Scripta, vol. T68, p. 10, 1996. ❋ Unknown (2000)
Nowadays, the different types of heterostructure transistor include the High Electron ❋ Unknown (2000)
Palo Alto proposed in 1963, independently of each other, the principle for the heterostructure laser, an invention that is probably as significant as that of the heterotransistor. ❋ Unknown (2000)
The first worked-out proposal for a heterostructure transistor was published in 1957 by Herbert Kroemer, then working at ❋ Unknown (2000)
Built in such a way that the atoms of each layer line up perfectly with those of the layer below, the nanowhiskers create an ideal heterostructure (composite material made from layers of different types of semiconductor). ❋ Lakshmi Sandhana (2002)
Fast transistors built using heterostructure technology are used in e.g. radio link satellites and the base stations of mobile telephones. ❋ Unknown (2000)
To put it simply, it seems that AlInN/GaN heterostructure channels are capable of driving evolutionary improvements reminiscent of those achieved by the transition from GaAs-based pHEMTs to their InP counterparts. ❋ Unknown (2010)
Significant progress was realized by switching from the familiar pairing of AlGaN and GaN to an AlInN and GaN heterostructure, which combines weaker surface depletion and better vertical scaling with apparently higher carrier velocities, according to Colombo Bolognesi from ETH-Zürich and ❋ Unknown (2010)
